(China (Mainland))
Product Summary
The CM600DU-24NFH is the Mitsubishi electric semiconductor, which is widely used for high frequency switching use (30kHz to 60kHz), gradient amplifier, induction heating, power supply, etc. Each CM600DU-24NFH module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Parametrics
CM600DU-24NFH absolute maximum ratings: (1)Junction Temperature: –40 to 150 ℃; (2)Storage Temperature: –40 to 125 ℃; (3)Collector-Emitter Voltage (G-E Short): 1200 Volts; (4)Gate-Emitter Voltage (C-E Short): ±20 Volts; (5)Collector Current (TC = 25℃): 600 Amperes; (6)Peak Collector Current:1200 Amperes; (7)Emitter Current (TC = 25℃): 600 Amperes; (8)Peak Emitter Current: 1200 Amperes; (9)Maximum Collector Dissipation (TC = 25℃, Tj ≤ 150℃): 1550 Watts; (10)Maximum Collector Dissipation (TC = 25℃, Tj ≤ 150℃): 3700 Watts; (11)Isolation Voltage (Main Terminal to Baseplate, AC 1 min.): 2500 Volts.
Features
CM600DU-24NFH features: (1)Low ESW(off); (2)Discrete Super-Fast Recovery; (3)Free-Wheel Diode; (4)Isolated Baseplate for Easy; (5)Heat Sinking.
Diagrams
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 CM600DU-24NFH |
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IGBT MOD DUAL 1200V 600A NFH SER |
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CM600DU-24F |
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IGBT MOD DUAL 1200V 600A F SER |
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CM600DU-24NF |
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IGBT MOD DUAL 1200V 600A NF SER |
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CM600DU-24NFH |
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IGBT MOD DUAL 1200V 600A NFH SER |
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CM600DU-5F |
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IGBT MOD DUAL 250V 600A F SER |
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CM600DY-12NF |
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IGBT MOD DUAL 600V 600A NF SER |
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CM600DY-24A |
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IGBT MOD DUAL 1200V 600A A SER |
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