(China (Mainland))
Product Summary
The FF800R17KF6C is an IGBT-Module. This technical information specifies semiconductor devices but guarantees no characteristics. The FF800R17KF6C is valid with the appropriate technical explanations. The valve of collector-emitter saturation voltage is 2,40V. The date threshold voltage IS 5,8V. The gate charge is 9, 00mC.
Parametrics
FF800R17KF6C absolute Maximum Ratings: (1)collector emitter voltage, Tvj= 25℃, VCES: 1700V; (2)DC collector current, Tc= 80℃, IC, nom: 800A; (3)DC collector current, Tc= 25℃, IC: 1800A; (4)repetitive peak collector current, tp= 1ms, Tc= 80℃, ICRM: 1600A; (5)total power dissipation, Tc= 25℃, Transistor, Ptot: 4,45W; (6)gate emitter peak voltage, VGES: +/- 20V.
Features
FF800R17KF6C characteristics: (1)Forward volatge: 1,90V; (2)Peak reverse recovery current: 1150, 1250A; (3)Recovered charge: 305, 510μC; (4)Reverse recovery energy: 190, 340mJ; (5)Thermal resistance, junction to case: 42,0K/kW; (6)Thermal resistance, canse to heatsink: 52,0K/kW.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FF800R17KF6C_B2 |
Infineon Technologies |
IGBT Modules N-CH 1.7KV 1.3KA |
Data Sheet |
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FF800R17KF6C_B4 |
Infineon Technologies |
IGBT Modules IGBT 1700V 800A |
Data Sheet |
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FF800R17KF6C-B2 |
Infineon Technologies |
IGBT Modules 1700V 800A DUAL |
Data Sheet |
Negotiable |
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