Product Summary
The IRF340 is a power MOSFET transistor. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The IRF340 also features all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. The IRF340 is well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Parametrics
IRF340 absolute maximum ratings: (1)ID @ VGS = 10V, TC = 25℃, Continuous Drain Current: 10A; (2)ID @ VGS = 10V, TC = 100℃, Continuous Drain Current: 6.0A; (3)IDM, Pulsed Drain Current: 40A; (4)PD @ TC = 25℃, Max. Power Dissipation: 125 W; (5)Linear Derating Factor: 1.0 W/℃; (6)VGS, Gate-to-Source Voltage: ±20 V; (7)EAS, Single Pulse Avalanche Energy: 5.7 mJ; (8)IAR, Avalanche Current: 10 A; (9)EAR, Repetitive Avalanche Energy: - mJ; (10)dv/dt, Peak Diode Recovery dv/dt: 4.0 V/ns; (11)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to 150℃; (12)Lead Temperature: 300℃ (0.063 in. (1.6mm) from case for 10s); (13)Weight: 11.5 (typical)g.
Features
IRF340 features: (1)Dynamic dv/dt Rating; (2)Hermetically Sealed; (3)Simple Drive Requirements; (4)Ease of Paralleling.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRF340 |
Other |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRF3 10 10%TR |
Vishay/Dale |
Power Inductors 10uH 10% |
Data Sheet |
Negotiable |
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IRF3 5.6 10%TR |
Vishay/Dale |
Power Inductors 5.6uH 10% |
Data Sheet |
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IRF300 |
Other |
Data Sheet |
Negotiable |
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IRF3000 |
MOSFET N-CH 300V 1.6A 8-SOIC |
Data Sheet |
Negotiable |
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IRF3000PBF |
MOSFET N-CH 300V 1.6A 8-SOIC |
Data Sheet |
Negotiable |
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IRF3007 |
Other |
Data Sheet |
Negotiable |
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