K9F2808UOC

K9F2808U0C, 16M x 8 Bit NAND Flash Memory,2.7 ~ 3.6 V, 5mA

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Price:: US $1.90~1.90 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 10000 :	1.90 / Piece

PartNumber:: K9F2808UOC

Brand:: Samsung semiconductor - SAMSUNG | Pack: TSSOP | D/C: 12+

Availability:: Supply Ability: 10000/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-06-08

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Part Number:K9F2808UOC
US $1.90 - 1.90
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Product Summary

The K9F2808U0C Offered in 16Mx8bit is 128M bit with spare 4M bit capacity. The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200μs. The K9F2808U0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

Parametrics

K9F2808UOC absolute maximum ratings:(1)Voltage on any pin relative to VSS:(-0.6 to + 4.6)V; (2)Storage Temperature:-65 to +150°C; (3)Short Circuit Current:5mA.

Features

K9F2808UOC features: (1)Voltage Supply : 2.7 ~ 3.6 V;(2)Organization:- Memory Cell Array;-(16M + 512K)bit x 8bit; - Data Register; - (512 + 16)bit x 8bit;(3)Automatic Program and Erase: - Page Program; -(512 + 16)Byte;- Block Erase : - (16K + 512)Byte;(4)Page Read Operation:- Page Size; - (512 + 16)Byte;- Random Access : 10μs(Max.); - Serial Page Access : 50ns(Min.); (5)Fast Write Cycle Time:- Program time : 200μs(Typ.); - Block Erase Time : 2ms(Typ.); (6)Command/Address/Data Multiplexed I/O Port; (7)Hardware Data Protection: - Program/Erase Lockout During Power Transitions; (8)Reliable CMOS Floating-Gate Technology: - Endurance: 100K Program/Erase Cycles; - Data Retention : 10 Years; (9)Command Register Operation; (10)Unique ID for Copyright Protection.