Product Summary

The 2N3771P is a general purpose linear amplifiers. This high power NPN silicon power transistors ia widely applied in series pass regulatorsand inductive switching.

Parametrics

Absolute maximum ratings:(1)Collector-Emitter Voltage, VCEO: 40Vdc; (2)Collector-Base Voltage, VCBO: 50Vdc; (3)Emitter-Base Voltage, VEBO: 7.0Vdc; (4)Base Current, IB: 7.5Adc; (5)Collector Current, IC: 30Adc; (6)Total Power Dissipation @ TA = +250℃, @ TC = +250℃, PT: 6.0W; (7)Operating & Storage Junction Temperature Range, TJ, Tstg: -65 to +200℃.

Features

Features:(1)low collector-emitter saturation voltage; (2)Vce(sat)=4.0V(MAX) @ Ic = 30A, Ib=6.0A; (3)general purpose linear amplifiers; (4)series pass regulatorsand inductive switching.

Diagrams

2N3700
2N3700
STMicroelectronics
Transistors Bipolar (BJT) NPN General Purpose
Data Sheet
0-1: $0.47
1-10: $0.43
10-100: $0.39
100-250: $0.36
2N3700DCSM
2N3700DCSM
Other

Data Sheet
Negotiable 
2N3700S
2N3700S
Other

Data Sheet
Negotiable 
2N3701
2N3701
Other

Data Sheet
Negotiable 
2N3702
2N3702
Central Semiconductor
Transistors Bipolar (BJT) PNP -25V -500mA BULK HFE/300
Data Sheet
0-1: $0.15
1-25: $0.13
25-100: $0.12
100-250: $0.11
2N3702_D26Z
2N3702_D26Z
Fairchild Semiconductor
Transistors Bipolar (BJT) PNP Transistor General Purpose
Data Sheet
Negotiable