(China (Mainland))
Product Summary
The 2N3771P is a general purpose linear amplifiers. This high power NPN silicon power transistors ia widely applied in series pass regulatorsand inductive switching.
Parametrics
Absolute maximum ratings:(1)Collector-Emitter Voltage, VCEO: 40Vdc; (2)Collector-Base Voltage, VCBO: 50Vdc; (3)Emitter-Base Voltage, VEBO: 7.0Vdc; (4)Base Current, IB: 7.5Adc; (5)Collector Current, IC: 30Adc; (6)Total Power Dissipation @ TA = +250℃, @ TC = +250℃, PT: 6.0W; (7)Operating & Storage Junction Temperature Range, TJ, Tstg: -65 to +200℃.
Features
Features:(1)low collector-emitter saturation voltage; (2)Vce(sat)=4.0V(MAX) @ Ic = 30A, Ib=6.0A; (3)general purpose linear amplifiers; (4)series pass regulatorsand inductive switching.
Diagrams
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 2N3700DCSM |
Other |
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Data Sheet |
Negotiable |
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2N3700S |
Other |
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Data Sheet |
Negotiable |
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2N3701 |
Other |
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Data Sheet |
Negotiable |
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2N3702 |
Central Semiconductor |
Transistors Bipolar (BJT) PNP -25V -500mA BULK HFE/300 |
Data Sheet |
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2N3702_D26Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Transistor General Purpose |
Data Sheet |
Negotiable |
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2N3702_D27Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Transistor General Purpose |
Data Sheet |
Negotiable |
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