Product Summary

The 2PG011 is a silicon N-channel enhancement IGBT. Its applications include plasma display panel drive, high speed switching circuits.

Parametrics

2PG011 absolute maximum ratings: (1)collector-emitter voltage: 540V; (2)gate-emitter voltage: -30 to 35V; (3)collector current: 40A; (4)peak collector current: 230A; (5)power dissipation: 40W; (6)junction temperature: 150℃; (7)storage temperature: -55 to 150℃.

Features

2PG011 features: (1)low collector-emitter saturation voltage: <2.5V; (2)high-speed switching: tf=185ns.

Diagrams

2PG011 dimensions