(China (Mainland))
Product Summary
The BDX66C is a P-N-P epitaxial base transistor in monolithic darlington circuit for audio output stages and general amplifier and switching applications.
Parametrics
BDX66C absolute maximum ratings: (1)Collector-Emitter Voltage:120V; (2)Collector-Base Voltage:120V; (3)Emitter-Base Voltage:5V; (4)Collector Current(d.c.):16A; (5)Collector current(peak value):20A; (6)Base Current:200mA; (7)Total Power Dissipation at TC = 25℃:150W; (8)Junction Temperature Range:200℃; (9)Storage Temperature Range:-65℃ to +200℃.
Features
BDX66C features: (1)Hermetic Metal TO3 Package; (2)Ideal for General Purpose Low Frequency Switching Applications ; (3)Screening Options Available.
Diagrams
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 BDX66C |
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| Image | Part No | Mfg | Description | |
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BDX65C |
Other |
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BDX66 |
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BDX66A |
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BDX66B |
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Negotiable |
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BDX66C |
Other |
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Negotiable |
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BDX67 |
Other |
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Negotiable |
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