Product Summary

The FZ1600R17KF6C-B2 is an IGBT transistor module.

Parametrics

FZ1600R17KF6C-B2 absolute maximum ratings: (1)collector-emitter voltage: 3.1 V; (2)gate threshold voltage: 4.5 V to 6.5 V; (3)gate charge: 19 μC; (4)input capacitance: 105 nF; (5)reverse transfer capacitance: 5.3 nF; (6)collector-emitter cut-off current: 160 mA; (7)gate-emitter leakage current: 400 nA.

Diagrams

FZ1600R17KF6C-B2 package dimension

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