(China (Mainland))
Product Summary
The K4T51163QE-ZCE7 is a 512Mb DDR2 SDRAM. It is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications.
Parametrics
K4T51163QE-ZCE7 absolute maximum ratings: (1)output impedance step size for OCD calibration: 1.5ohms; (2)pull-up and pull-down mismatch: 4ohms; (3)output slew rate: 5V/ns.
Features
K4T51163QE-ZCE7 features: (1)Burst Length: 4 , 8(Interleave/nibble sequential); (2)Programmable Sequential / Interleave Burst Mode; (3)Bi-directional Differential Data-Strobe (Single-ended datastrobe is an optional feature); (4)Off-Chip Driver(OCD) Impedance Adjustment; (5)On Die Termination; (6)Special Function Support.
Diagrams
