Product Summary

The MG500Q1US1 is an N channel IGBT. Applications of the MG500Q1US1 are high power switching,motor control.

Parametrics

MG500Q1US1 absolute maximum ratings: (1)Colleetor-Emitter Voltage VCES: 1200V; (2)Gate-Emitter Voltage VGES: ±20V; (3)Collector Power Dissipation (Tc = 25°C) PC: 2900W; (4)Junction Temperature Tj: 150°C; (5)Storage Temperature Range Tstg: -40-125°C; (6)Isolation Voltage Vlsol: 2500 (AC, lmin.)V; (7)Screw Torque (Terminal: M4 / M6 / Mounting): 2/3/3N-m.

Features

MG500Q1US1 features: (1)High Input Impedance; (2)High Speed : tf=0.5μs (Max.); trr = 0.5μs (Max.); (3)Low Saturation Voltage: VeE(sat) = 4.0V(Max.) ; (4)Enhancement-Mode ; (5)The Electrodes are Isolated from Case.

Diagrams

MG500Q1US1 pin connection

MG50Q2YS40
MG50Q2YS40
Other

Data Sheet
Negotiable