Product Summary

The MJ11033G is a High-Current Complementary Silicon Power Transistor. It is for use as output devices in complementary general purpose amplifier applications.

Parametrics

MJ11033G absolute maximum ratings: (1)Collector-Emitter Voltage: 120V; (2)Collector-Base Voltage: 120V; (3)Emitter-Base Voltage: 5.0V; (4)Collector Current: Continuous:50A, Peak:100A; (5)Base Current - Continuous:2.0A; (6)Total Power Dissipation @ TC = 25℃:200W; (7)Derate Above 25℃ @ TC = 100℃:1.71W/℃; (8)Operating and Storage Junction Temperature Range:-55℃ to +200℃.

Features

MJ11033G features: (1)High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc, hFE = 400 (Min) @ IC = 50 Adc; (2)Curves to 100 A (Pulsed); (3)Diode Protection to Rated IC; (4)Monolithic Construction with Built-In Base-Emitter Shunt Resistor; (5)Junction Temperature to +200℃; (6)Pb-Free Packages are Available.

Diagrams

MJ11033G circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MJ11033G
MJ11033G
ON Semiconductor
Transistors Darlington 50A 120V Bipolar Power PNP
Data Sheet
0-1: $5.14
1-25: $4.26
25-100: $3.73
100-500: $3.32
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(USD)		 Quantity
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Data Sheet
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