Product Summary

The RJH3044 is a silicon N channel IGBT. It has high speed power switching.

Parametrics

RJH3044 absolute maximum ratings: (1)collector to emitter voltage: 360V; (2)Gate to emitter voltage: ±30V; (3)collector current: 30A; (4)collector peak current: 200A; (5)collector to emitter diode forward peak current: 100A; (6)collector dissipation: 20W; (7)junction temperature: 150℃; (8)storage temperature: -55 to 150℃.

Features

RJH3044 features: (1)trench gate and thin wafer technology; (2)high speed switching; (3)low collector to emitter saturation voltage; (4)low leak current; (5)built-in fast recovery diode; (6)isolated package.

Diagrams

RJH3044 block diagram