Product Summary

The RJP30E2 is a Silicon N channel IGBT. It has a high speed power switching.

Parametrics

RJP30E2 absolute maximum ratings: (1)Collector to emitter voltage: 360V; (2)Gate to emitter voltage: ±30; (3)collector current: 35A; (4)Collector dissipation: 50W; (5)Junction temperature: 150℃; (6)storage temperature: -55 to 150℃.

Features

RJP30E2 features: (1)trench gate technology; (2)low collector to emitter saturation voltage; (3)high speed switching; (4)low leak current.

Diagrams

RJP30E2 diagram