Product Summary
The SI7617DN-T1-GE3 is a sub package of SI7617DN. It is a P-Channel 30-V (D-S) MOSFET. Applications inlcude Notebook Battery Charging and Notebook Adapter Switch.
Parametrics
SI7617DN-T1-GE3 absolute maximum ratings: TA = 25 °C, (unless otherwise noted): (1)Type: Power MOSFET; (2)Number of Elements: 1; (3)Polarity: P; (4)Channel Mode: Enhancement; (5)Drain-Source On-Res: 0.0123Ohm; (6)Drain-Source On-Volt: 30V; (7)Gate-Source Voltage (Max): ±25V; (8)Power Dissipation: 3.7W; (9)Operating Temp Range: -55C to 150C; (10)Operating Temperature Classification: Military; (11)Mounting: Surface Mount; (12)Packaging: Tape and Reel.
Features
SI7617DN-T1-GE3 features: (1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET Power MOSFET; (3)100% Rg Tested; (4)100% UIS Tested; (5)Compliant to RoHS Directive 2002/95/EC.
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
![]() SI7617DN-T1-GE3 |
![]() Vishay/Siliconix |
![]() MOSFET 30V 35A 52W 12.3mohm @ 10V |
![]() Data Sheet |
![]()
|
|
||||||||||||
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
![]() |
![]() Si7601DN |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() SI7601DN-T1-E3 |
![]() Vishay/Siliconix |
![]() MOSFET 20V 16A 52W 19.2mohm @ 4.5V |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() SI7601DN-T1-GE3 |
![]() Vishay |
![]() MOSFET 20V 16A 52W 19.2mohm @ 4.5V |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() Si7611DN |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() SI7611DN-T1-GE3 |
![]() Vishay/Siliconix |
![]() MOSFET 40V 18A 39W 25mohm @ 10V |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() Si7613DN |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|