Product Summary
The SXB-4089Z amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost, surfacemountable plastic package. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, WCDMA applications. The high linearity of SXB-4089Z makes it an ideal choice for multi-carrier as well as digital applications.
Parametrics
SXB-4089Z absolute maximum ratings:(1)Max Device Current (ID): 500 mA; (2)Max Device Voltage (VD): 6 V; (3)Max. RF Input Power: 60mW; (4)Max. Dissipated Power: 2W; (5)Max. Junction Temp. (TJ) : +165°C; (6)Operating Temp. Range (TL) :-40°C to +85°C; (7)Max. Storage Temp: +150°C.
Features
SXB-4089Z features: (1)On-chip Active Bias Control, Single 5V Supply; (2)High Output 3rd Order Intercept:+45 dBm typ.; (3)High P1dB : +28 dBm typ.; (4)High Gain: +20 dB at 880 MHz; (5)Low Rth: 25°C/W typ.; (6)Robust 2000V ESD, Class 2.
Diagrams
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![]() IC AMP HBT GAAS 1/2W SOT-89 |
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![]() IC AMP HBT GAAS 1/2W SOT-89 |
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