(China (Mainland))
Product Summary
The 2SC1971 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications.
Parametrics
2SC1971 absolute maximum ratings: (1)collector to base voltage:35V; (2)emitter to base voltage:4V; (3)collector current: 2A; (4)junction temperature: 150°C; (5)storage temperature: -55°C to 150 °C.
Features
2SC1971 features: (1)High power gain; (2)emitter ballasted constrction, gold metallization for high reliability and good performances; (3)To-220 package similar is combinient for mounting; (4)Ability of withstanding more than 20:1 load VSWR when operated at Vcc=15.2V, Po=6W, f=175MHz.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 2SC1971 |
Other |
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Data Sheet |
Negotiable |
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Data Sheet |
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Data Sheet |
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