(China (Mainland))
Product Summary
The 75NF75 is the third Generation HEXFET from International Rectifier which provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50watts. The low thermal resistance and low package of the 75NF75 cost of the TO-220 contribute to its wide acceptance throughout the industry.
Parametrics
75NF75 absolute maximum ratings: (1)Continuous Drain Current, VGS@10V: 75 A; (2)Continuous Drain Current, VGS@10V: 60 A; (3)Pulsed Drain Current ②: 300 A; (4)Power Dissipation: 200 W; (5)Linear Derating Factor: 1.5 W/℃; (6)Gate-to-Source Voltage: ±20 V; (7)Single Pulse Avalanche Energy ③: 23 mJ; (8)Peak Diode Recovery dv/dt ④: 5.9 V/ns; (9)Operating Junction and Storage Temperature Range: –55 to +175℃; (10)Soldering Temperature, for 10 seconds: 300(1.6mm from case)℃.
Features
75NF75 features: (1)Dynamic dv/dt Rating; (2)175℃ Operating Temperature; (3)Fast switching; (4)Ease of Paralleling; (5)Simple Drive Requirements.
Diagrams
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| Image | Part No | Mfg | Description | |
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75NF75 |
Other |
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Data Sheet |
Negotiable |
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