(China (Mainland))
Product Summary
The FF1200R17KE3 is a kind of IGBT-module.
Parametrics
FF1200R17KE3 absolute maximum ratings: (1)Collector-emitter voltage: 1700V; (2)DC- collector current: TC=80℃, Tvj=150℃, 1200A; TC=25℃, Tvj=150℃, 1700A; (3)Repective peak collector current: 2400A; (4)Total power dissipation: 660kW; (5)Gate-emitter peak volatge: ±20V.
Features
FF1200R17KE3 characteristics: (1)Forward volatge: 1,90V; (2)Peak reverse recovery current: 1150, 1250A; (3)Recovered charge: 305, 510μC; (4)Reverse recovery energy: 190, 340mJ; (5)Thermal resistance, junction to case: 42,0K/kW; (6)Thermal resistance, canse to heatsink: 52,0K/kW.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FF1200R17KE3 |
Infineon Technologies |
IGBT Transistors 1700V 1200A DUAL |
Data Sheet |
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FF1200R17KE3_B2 |
Infineon Technologies |
IGBT Modules N-CH 1.7KV 1.7KA |
Data Sheet |
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