(China (Mainland))
Product Summary
The BLF545 is a Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The BLF545 is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors.
Parametrics
BLF545 absolute maximum ratings: (1)VDS, drain-source voltage: 65 V; (2)±VGS, gate-source voltage: 20 V; (3)ID, DC drain current: 3.5 A; (4)Ptot, total power dissipation: 92 W; (5)Tstg, storage temperature: -65 to 150℃; (6)Tj, junction temperature: 200℃.
Features
BLF545 features: (1)High power gain; (2)Easy power control; (3)Good thermal stability; (4)Gold metallization ensures excellent reliability; (5)Designed for broadband operation.
Diagrams
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 BLF545 |
Other |
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Data Sheet |
Negotiable |
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BLF521 |
Other |
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Data Sheet |
Negotiable |
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BLF521,112 |
NXP Semiconductors |
Transistors RF MOSFET Power TRANSISTOR UHF PWR DMOS |
Data Sheet |
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BLF522 |
Other |
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Data Sheet |
Negotiable |
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BLF542 |
Other |
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Data Sheet |
Negotiable |
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BLF542,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF DMOS 5W UHF |
Data Sheet |
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BLF543 |
Other |
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Data Sheet |
Negotiable |
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