Product Summary
The FQH90N15 is an N-channel power MOSFET. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifire, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power supply.
Parametrics
FQH90N15 absolute maximum ratings: (1)Drain-source voltage: 150V; (2)drain current: 90A; (3)drain current: 360A; (4)gate-source voltage: ±25V; (5)single pulsed avanlanche energy: 1400mJ; (6)avalanche current: 90A; (7)peak diode recovery dv/dt: 6V/ns; (8)power dissipation: 375W.
Features
FQH90N15 features: (1)90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V; (2)Low gate charge (typical 220 nC); (3)Low Crss (typical 200 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability; (7)175°C maximum junction temperature rating.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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FQH90N15 |
Fairchild Semiconductor |
MOSFET NCH/150V/90A/QFET |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
FQH90N15 |
Fairchild Semiconductor |
MOSFET NCH/150V/90A/QFET |
Data Sheet |
Negotiable |
|
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FQH90N10V2 |
Fairchild Semiconductor |
MOSFET NCH/150V/90A/QFET |
Data Sheet |
Negotiable |
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