Product Summary

The FQH90N15 is an N-channel power MOSFET. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifire, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power supply.

Parametrics

FQH90N15 absolute maximum ratings: (1)Drain-source voltage: 150V; (2)drain current: 90A; (3)drain current: 360A; (4)gate-source voltage: ±25V; (5)single pulsed avanlanche energy: 1400mJ; (6)avalanche current: 90A; (7)peak diode recovery dv/dt: 6V/ns; (8)power dissipation: 375W.

Features

FQH90N15 features: (1)90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V; (2)Low gate charge (typical 220 nC); (3)Low Crss (typical 200 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability; (7)175°C maximum junction temperature rating.

Diagrams

FQH90N15 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
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FQH90N15
FQH90N15

Fairchild Semiconductor

MOSFET NCH/150V/90A/QFET

Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FQH90N15
FQH90N15

Fairchild Semiconductor

MOSFET NCH/150V/90A/QFET

Data Sheet

Negotiable 
FQH90N10V2
FQH90N10V2

Fairchild Semiconductor

MOSFET NCH/150V/90A/QFET

Data Sheet

Negotiable