Product Summary
The IRFS4227 is a PDP switch. It is specifically designed for Sustain, Energy recovery & pass swtich applications in plasma display panels. This MOSFET utilizes the lated processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175℃ operating junction temperature and high repetitive peak current capability.
Parametrics
IRFS4227 absolute maximum ratings: (1)gate-to-source voltage: ±30V; (2)continuous drain current: 62A; (3)pulsed drain current: 260A; (4)repetitive peak current: 130A; (5)power dissipation: 330W; (6)linear derating factor: 2.2W/℃; (7)operating junction and storage temperature range: -40 to 175℃.
Features
IRFS4227 features: (1)advanced process tecnology; (2)key parameters optimized for PDP sustain, energy recovery and pass switch application; (3)low epulse rating to reduce power dissipation in PDP sustain, energy recovery and pass switch applications; (4)low QG for fast response; (5)high repetitive peak current capability for reliable operation; (6)175℃ operating junction temperature for improved ruggedness.
Diagrams
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![]() IRFS4227PBF |
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![]() IRFS4227TRLPBF |
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![]() MOSFET MOSFT 200V 62A 26mOhm 70nC Qg |
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