(China (Mainland))
Product Summary
The NT5DS16M16CS-6KI uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This NT5DS16M16CS-6KI device is manufactured using the advanced process and fab of Nanya Tehcnology Corporation.
Parametrics
NT5DS16M16CS-6KI absolute maximum ratings: (1)Voltage on I/O pins relative to VSS: -0.5 to VDDQ+ 0.5 V; (2)Voltage on Inputs relative to VSS: -0.5 to +3.6 V; (3)Voltage on VDD supply relative to VSS: -0.5 to +3.6 V; (4)Voltage on VDDQ supply relative to VSS: -0.5 to +3.6 V; (5)Operating Temperature (Ambient): 0 to +70 °C; (6)Storage Temperature (Plastic): 55 to +150 °C; (7)Power Dissipation: 1.0 W; (8)Short Circuit Output Current: 50 mA.
Features
NT5DS16M16CS-6KI features: (1)DDR 256M bit, die C, based on 110nm design rules; (2)Double data rate architecture: two data transfers per clock cycle; (3)Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver; (4)DQS is edge-aligned with data for reads and is centeraligned with data for writes; (5)Four internal banks for concurrent operation; (6)Auto Precharge option for each burst access; (7)Auto Refresh and Self Refresh Modes; (8)Available in Halogen and Lead Free packaging.
Diagrams
