Product Summary

The RJH3347 is a silicon N channel IGBT.

Parametrics

RJH3347 absolute maximum ratings: (1)collector to emitter voltage: 360V; (2)Gate to emitter voltage: ±30V; (3)collector current: 30A; (4)Collector peak current: 200A; (5)collector to emitter diode forward peak current: 100A; (6)junction to case thermal impedance: 6.25℃/W; (7)Storage temperature: -55 to 150℃.

Features

RJH3347 features: (1)Trench gate and thin wafer technology (G6H-II series); (2)High speed switching: tr =80 ns typ., tf = 150 ns typ; (3)Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ; (4)Low leak current: ICES = 1A max; (5)Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ; (6)Isolated package: TO-220FL.

Diagrams

RJH3347 diagram