(China (Mainland))
Product Summary
The S29GL128N10TFI02 is a 3V-only page mode flash memory. It features 110nm mirrorbit process technology. It is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations.
Parametrics
S29GL128N10TFI02 absolute maximum ratings: (1)storage temperature, plastic packages: -65 to 150℃; (2) ambient temperature with power applied: -65 to 125℃; (3)voltage with respect to ground: -0.5 to 4V; (4)output short circuit current: 200mA.
Features
S29GL128N10TFI02 features: (1)single power supply operation; (2)enhanced versatile control; (3)manufactured on 110nm Mirrorbit process technology; (4)secured silicon sector region; (5)flexible sector architecture; (6)compatibility with JEDEC standards.
Diagrams
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 S29GL128N10TFI020 |
Other |
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Data Sheet |
Negotiable |
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Other |
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Negotiable |
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Data Sheet |
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Data Sheet |
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Flash 1GB 3.0-3.6V 110ns |
Data Sheet |
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Data Sheet |
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Flash 1GB 3.0-3.6V 110ns PBF |
Data Sheet |
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