(China (Mainland))
Product Summary
The STW26NM60 is an N-channel Power MOSFET developed using the second generation of MDmesh technology. The STW26NM60 applies a new vertical structure to the companys strip layout to yield a device with one of the worlds lowest on-resistance and gate charge, making it suitable for the most demanding high-efficiency converters.Application of the STW26NM60 is switching.
Parametrics
STW26NM60 absolute maximum ratings: (1)VDS Drain-source voltage: 600 V; (2)VGS Gate-source voltage: ± 25 V; (3)ID Drain current (continuous) at TC = 25 ℃: 20A; (4)ID Drain current (continuous) at TC = 100 ℃: 12.6A; (5)PTOT Total dissipation at TC = 25 ℃: 140W; (6)VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 ℃): 2500 V; (7)Tstg Storage temperature: –55 to 150 ℃; (8)Tj Max. operating junction temperature: 150 ℃.
Features
STW26NM60 features: (1)100% avalanche tested; (2)Low input capacitance and gate charge; (3)Low gate input resistance.
Diagrams
-
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 STW26NM60 |
STMicroelectronics |
MOSFET N-Ch 600 Volt 30 Amp |
Data Sheet |
Negotiable |
|
||||||||||||
|
STW26NM60N |
STMicroelectronics |
MOSFET N-channel 600 V Mdmesh II Power |
Data Sheet |
|
|
||||||||||||
