Product Summary

The STY34NB50 is a N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH MOSFET.The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. The STY34NB50 can be applied in high current, high speed switching, DC-AC converter for welding, and motor drive, etc.

Parametrics

STY34NB50 absolute maximum ratings: (1)Drain-source Voltage (VGS = 0): 500 V; (2)Drain-gate Voltage (RGS = 20 kΩ) : 500 V; (3)Peak Diode Recovery voltage slope: 4.5 V/ns; (4)Max.Operating Junction Temperature:150 °C; (5)Storage Temperature: -65 to 150°C.

Features

STY34NB50 features: (1)typical RDS(on) = 0.11Ω; (2)extremely high dv/dt capability; (3)±30V gate to source voltage rating; (4)100% avalanche tested; (5)low intrinsic capacitance; (6)gate charge minimized; (7)reduced voltage spread.

Diagrams

STY34NB50 internal schematic diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STY34NB50
STY34NB50
STMicroelectronics
MOSFET N-Ch 500 Volt 34 Amp
Data Sheet
Negotiable 
STY34NB50F
STY34NB50F
Other

Data Sheet
Negotiable