Product Summary
The STB13NK60ZT4 is a N-CHANNEL 600V-0.48Ω-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESh Power MOSFET. The series is obtained through an extreme optimization well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Parametrics
STB13NK60ZT4 absolute maximum ratings: (1)Drain-source Voltage (VGS = 0): 600 V; (2)Drain-gate Voltage (RGS = 20 kΩ) : 600 V; (3)Peak Diode Recovery voltage slope: 4.5 V/ns; (4)Insulation Withstand Voltage (DC): 2500 V; (5)Operating Junction Temperature: -55 to 150 °C; (6)Storage Temperature: -55 to 150°C.
Features
STB13NK60ZT4 features: (1)typical RDS(on) = 0.48Ω; (2)exrtremely high dv/dt capability: (3)100% avalanche tested; (4)gate charge minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility.
Diagrams
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![]() MOSFET N-Ch 600 Volt 13 Amp Zener SuperMESH |
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