Product Summary

The TIP36C is a complementary silicon high power transistor. It is a silicon epitaxial-base NPN transistor mounted in TO-218 plastic package. The TIP36C is intended for use in power amplifier and switching applications.

Parametrics

TIP36C absolute maximum ratings: (1)collector-base voltage: 100V; (2)Collector-emitter voltage: 100V; (3)Emitter-base voltage: 5V; (4)Collector current: 25A; (5)Base current: 5A; (6)Storage temperature: -65 to 150℃; (7)operating junction temperature: 150℃.

Features

TIP36C features: (1)Collector cut-off current: 1mA; (2)Emitter cut-off current: 1mA; (3)collector-emitter sustaining voltage: 80V; (4)Collector cut-off current, VBE=0: 0.7mA.

Diagrams

TIP36C block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
TIP36C
TIP36C
STMicroelectronics
Transistors Bipolar (BJT) PNP Gen Pur Power
Data Sheet
0-1: $0.95
1-10: $0.89
10-100: $0.78
100-250: $0.70
TIP36CG
TIP36CG
ON Semiconductor
Transistors Bipolar (BJT) 25A 100V 125W PNP
Data Sheet
0-1: $1.63
1-25: $1.27
25-100: $1.01
100-500: $0.88
TIP36CP
TIP36CP
STMicroelectronics
Transistors Bipolar (BJT) COMPLMNTRY PWR TRANS
Data Sheet
Negotiable 
TIP36C-S
TIP36C-S
Bourns
Transistors Bipolar (BJT) 100V 25A PNP
Data Sheet
Negotiable 
TIP36CW
TIP36CW
STMicroelectronics
Transistors Bipolar (BJT) HIGH POWER TRANS
Data Sheet
0-1: $1.41
1-10: $1.06
10-100: $1.02
100-250: $0.88